elektronische bauelemente SSP7404NA 35a, 30v, r ds(on) 2.8 m ? n-channel enhancement mosfet 30-dec-2013 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free features low r ds(on) trench technology. low thermal impedance. fast switching speed. applications white led boost converters. automotive systems. industrial dc/dc conversion circuits. package information package mpq leader size sop-8pp 3k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v t a =25c 35 continuous drain current 1 t a =70c i d 28 a pulsed drain current 2 i dm 100 a continuous source current (diode conduction) 1 i s 7.3 a t a =25c 5 power dissipation 1 t a =70c p d 3.2 w operating junction and storage temperature range t j , t stg -55~150 c thermal resistance data t Q 10 sec 25 maximum junction to ambient 1 steady state r ja 65 c / w notes: 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction temperat ure. millimeter millimeter ref. min. max. ref. min. max. a 0.85 1.00 0 10 b 5.40 5.60 b 5.10 5.30 c 0.15 0.25 c 0.30 0.50 d 3.71 3.91 d 1.27bsc e 5.95 6.15 e 5.45 5.65 f 0.08 0.24 f 0.20 0 .35 g 4.25 4.45 g 1.10 - sop-8pp
elektronische bauelemente SSP7404NA 35a, 30v, r ds(on) 2.8 m ? n-channel enhancement mosfet 30-dec-2013 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min typ max unit test conditions static gate-threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250 a gate-body leakage i gss - - 100 na v ds =0, v gs = 20v - - 1 v ds =24v, v gs =0 zero gate voltage drain current i dss - - 25 a v ds =24v, v gs =0,t j =55c on-state drain current 1 i d(on) 50 - - a v ds =5v, v gs =10v - - 2.8 v gs =10v, i d =20a drain-source on-resistance 1 r ds(on) - - 4 m v gs =4.5v, i d =16a forward transconductance 1 g fs - 26 - s v ds =15v, , i d =20a diode forward voltage v sd - 0.73 - v i s =3.7a, v gs =0 dynamic 2 total gate charge q g - 64 - gate-source charge q gs - 17 - gate-drain charge q gd - 32 - nc i d =20a v ds =15v v gs =4.5v turn-on delay time td (on) - 17 - rise time t r - 28 - turn-off delay time td (off) - 168 - fall time t f - 65 - ns i d =20a, v ds =15v v gen =10v r l =0.8 , r gen =6 input capacitance c iss - 13001 - output capacitance c oss - 966 - reverse transfer capacitance c rss - 939 - pf v ds =15v, v gs =0, f=1mhz notes: 1. pulse test pw Q 300 us duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
elektronische bauelemente SSP7404NA 35a, 30v, r ds(on) 2.8 m ? n-channel enhancement mosfet 30-dec-2013 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics curve
elektronische bauelemente SSP7404NA 35a, 30v, r ds(on) 2.8 m ? n-channel enhancement mosfet 30-dec-2013 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics curve
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